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  p p jp10na80 / pjf10 na80 march 10,2014 - rev.00 page 1 8 00 v n - c hannel mosfet v oltage 8 0 0 v c urrent 10 a ito - 220ab - f to - 220ab f eatures ? r ds(on) , v gs @10v,i d @ 5 a< 1.15 ? high switching speed ? improved dv/dt capability ? low gate charge ? low reverse tran sfer capacitance ? lead free in compliance with eu rohs 2011/65/eu directive. ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case: to - 220ab, ito - 220ab - f package ? terminals : solderable per mil - std - 750, method 2026 ? to - 220ab appro x. weight : 0.06 7 ounces, 1. 89 grams ? ito - 220ab - f approx. weight : 0.068 ounces, 2 grams maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted) parameter symbol to - 220ab ito - 220ab - f units drain - source voltage v ds 800 v ga te - source voltage v gs + 30 v continuous drain current i d 10 a pulsed drain current i dm 40 a single pulse avalanche energy (note 1 ) e as 795 mj power dissipation t c =25 o c p d 1 8 0 6 0 w derate above 25 o c 1. 44 0.4 8 w/ o c operating junction and storage t emperature range t j ,t stg - 55~150 o c typical thermal resistance - junction to case - j unction to ambient r jc ja 0. 69 62.5 2.08 120 o c /w ? limited only by maximum junction temperature
p p jp10na80 / pjf10 na80 march 10,2014 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs = 0v,i d =250ua 8 00 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 3 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 5 a - 1. 05 1.1 5 dss v ds = 8 00v,v gs =0v - 0.01 1 ua gate - source leakage current i gss v gs = + 30 v,v ds =0v - + 10 + 100 na diode forward voltage v sd i s = 10 a,v gs =0v - 0.8 7 1.4 v dynamic (note 4 ) total gate charge q g v ds = 640 v, i d = 10 a, v gs =10v (note 2,3 ) - 31 - nc gate - source charge q gs - 8 - gate - drain charge q gd - 12 - input capacitance ciss v ds = 25v, v gs =0v, f=1.0mhz - 1 517 - pf output capacitance coss - 1 80 - reverse transfer capacitance crss - 9 - turn - on delay time td (on) v dd = 400 v, i d = 10 a, r g = 25 (note 2,3 ) - 22 - ns turn - on rise time t r - 31 - turn - off delay time td (off) - 56 - turn - off fall time t f - 31 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 10 a maximum pulsed drain - source diode for ward current i sm --- - - 40 a reverse recovery time trr v gs =0v, i s = 10 a di f / dt=100a/us (note 2 ) - 660 - ns reverse recovery charge qrr - 6 - uc notes : 1. l=30mh, i as = 7.1 a, v dd = 5 0 v, r g =2 5 ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essentially independent of operating temperature typical characteristics . 4. guaranteed by design, not subject to product ion testing
p p jp10na80 / pjf10 na80 march 10,2014 - rev.00 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. dr ain current fig. 4 on - resistsnce vs. junction temperature fig. 5 capacitance vs. drain - source voltage fig. 6 body dlode characterlslcs
p p jp10na80 / pjf10 na80 march 10,2014 - rev.00 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 breakdown voltage vari ation vs.temperature fig. 9 threshold voltage variation with temperature fig. 10 maximum safe operating area fig. 11 maximum safe operating area
p p jp10na80 / pjf10 na80 march 10,2014 - rev.00 page 5 t ypical characteristic curves fig. 13 pjp10 na80 normalized transient thermal impedance vs. pulse width fig. 14 pjf10 na 8 0 normalized transient thermal impedance vs. pulse width
p p jp10na80 / pjf10 na80 march 10,2014 - rev.00 page 6 packaging information . ito - 220ab - f dimension u nit: mm t o - 220ab dimension u nit: mm
p p jp10na80 / pjf10 na80 march 10,2014 - rev.00 page 7 p art n o packing code v er sion part n o packing code package type packing type marking ver sion pjp 10 n a8 0_t0_00001 to - 220 ab 50pcs / tube p10 n a8 0 halogen free pj f10 n a8 0_t0_00001 ito - 220ab - f 50pcs / tube f10 n a8 0 halogen free
p p jp10na80 / pjf10 na80 march 10,2014 - rev.00 page 8 disclaimer


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